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Magazine Articles
- Analog PDK 101 (Marty C. Dahlke, Son T. Tran, and Phillip B. Espinasse, June/July 2004, Chip Design Magazine, p. 38-42, [Chip Design Magazine])
- What's In Store For Silicon Photoreceivers? (Phillip B. Espinasse and Steven L. Kosier, March/April 2004, IEEE Circuits & Devices, Vol. 20, No. 2, p. 23-31, [IEEE Circuits & Devices Magazine] )Ó (Copyright)
- Know Thy Enemy (Phillip B. Espinasse, Q1 2004, IEEE Engineering Management Society (EMS) Newsletter, Vol. 54, No. 1, p. 7-9, [IEEE EMS Newsletter] )Ó (Copyright)
- Detection Reflections (Phillip B. Espinasse and Steven L. Kosier, March 2004, OE Magazine, Vol. 4, No. 3, p. 24-26, [www.oemagazine.com])
- Lowering Magnetic Fields in Metal Dry-Etch Recipes to Reduce MOS Leakage Levels (Venuka K. Jayatilaka and Phillip B. Espinasse, January/February 2004, MICRO Magazine, Vol. 22, No.1, p. 39-45, [www.micromagazine.com])
- Winning Gold Stars as a Pure-Play Foundry (October 21, 2002, Electronic Design)
- Bridging Past and Present (October 2002, Twin Cities Business Monthly)
- HBT Transistors Reach the 100 GHz Barrier (Phillip B. Espinasse, December 2000, Compound
Semiconductor, Vol. 6, No. 9, [www.compoundsemiconductor.net])
Online Articles
- Analog Circuits Need More Than Just DFT Methods (Steven L. Kosier, March 3, 2003, EE Times [www.eetimes.com])
- Si/SiGe Devices and the RF Communications Revolution (Phillip B. Espinasse, February 23, 2001, Semiconductor Online, VerticalNet, Inc. [www.semiconductoronline.com])
- Transistor IC’s Above and Beyond 50 GHz (Phillip B. Espinasse, October 2, 2000, Semiconductor Online, VerticalNet, Inc. [www.semiconductoronline.com])
Journal / Conference Articles
- Effects of Underlying Dielectric on Boron Implanted Polysilicon in Presence of Fluorine (Sandhya
Gupta, 2003, Solid State Electronics, Vol. 47, PP. 307-313). Reprinted from Solid State Electronics, Vol. 47, Sandhya Gupta, Effects of Underlying Dielectric on Boron Implanted Polysilicon in Presence of Fluorine , PP. 307-313, Copyright 2003, with permission from Elsevier.
- Effect of Boron and BF Implant on Polysilicon Resistors (Sandhya
Gupta, 2002, Journal of the Electrochemical Society, Vol. 149, No.
4, pp. G271-G275), Ó The Electrochemical Society, Inc., reproduced with permission, www.electrochem.org.
- Improved Latch-Up Immunity in Junction-Isolated Smart Power ICs with Unbiased Guard Ring (Sandhya Gupta, John
C. Beckman and Steven L. Kosier, December 2001, IEEE Electron
device letters, Vol. 22, No. 12, pp. 600-602) Ó (Copyright)
- Unbiased Guard Ring for Latchup-Resistant, Junction-Isolated Smart-Power ICs (Sandhya Gupta, John C.
Beckman and Steven L. Kosier, September 2001, IEEE BCTM 11.3, pp.
188-191) Ó (Copyright)
- Micromask-Induced Surface Defects Inside Si Trench Isolation (Kyeonglan Rho, November 2000, Journal of Vacuum Science & Technology B, Vol. 18, No. 6, PP. 3476-3480) Ó
(Copyright)
- Effect of Trench Spacer Etch on PMOS Threshold Voltage (Kyeonglan Rho, Joseph Burkhardt, Jeremy Schweigert and Daniel Fertig, May 23-24, 2000, 5th International Symposium on Plasma Process-Induced Damage (P2ID), Proceedings 2000, p. 57-60) Ó
(Copyright)
- Reduction of Oxide Tub Isolation Stress Using a Silicon Nitride Liner (Joseph J. Burkhardt, Jeffery R. Cox,
Daniel J. Fertig and Gregory J. Nelson, 2000, Journal of the
Electrochemical Society, Vol. 147, No. 9, pp. 3482-3486) ÓThe
Electrochemical Society, Inc., reproduced with permission,
www.electrochem.org.
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